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CY62146EV30 - 4-Mbit (256K x 16) Static RAM

Description

of read and write modes.

The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits.

Features

  • Very high speed: 45 ns.
  • Wide voltage range: 2.20V.
  • 3.60V.
  • Pin compatible with CY62146DV30.
  • Ultra low standby power.
  • Typical standby current: 1 µA.
  • Maximum standby current: 7 µA.
  • Ultra low active power.
  • Typical active current: 2 mA @ f = 1 MHz.
  • Easy memory expansion with CE, and OE features.
  • Automatic power down when deselected.
  • CMOS for optimum speed and power.
  • Available in a Pb-fr.

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📁 Similar Datasheet

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Full PDF Text Transcription

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CY62146EV30 MoBL® 4-Mbit (256K x 16) Static RAM Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62146DV30 • Ultra low standby power — Typical standby current: 1 µA — Maximum standby current: 7 µA • Ultra low active power — Typical active current: 2 mA @ f = 1 MHz • Easy memory expansion with CE, and OE features • Automatic power down when deselected • CMOS for optimum speed and power • Available in a Pb-free 48-ball VFBGA and 44-pin TSOP II packages reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH).
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