CGHV40050 Datasheet (Cree)

CGHV40050, GaN HEMT

RES, 560Ohms, 0805, HIGH POWER SMT RES, 3.6Ohms, 1005, HIGH POWER SMT RES, SMT, 0805, 22 OHM RES, SMT, 0805, 1OHM CAP, 56 PF +/- 5%,, 250V, 0805, ATC 600F CAP, 24 pF +/- 5%, 250V, 0805, ATC 600F CAP, 1.1pF, +/-0.1pF, 250V, 0805, ATC600F CAP, 0.1 PF +/- 0.05 pF, 0805, ATC 600F CAP, 240pF, +/-5%, 0805

CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz.

The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously.

It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide band

CGHV40050 Features

* Up to 4 GHz Operation

* 77 W Typical Output Power

* 17.5 dB Small Signal Gain at 1.8 GHz

* Application Circuit for 0.8 - 2.0 GHz

* 53 % Efficiency at PSAT

* 50 V Operation Units dB W % dB Rev 1.0 - July 2015 Subject to change without notice.