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CSD1616 - NPN SILICON EPITAXIAL TRANSISTOR

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CSD1616 Product details

Description

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current (DC) IC Collector Current (Pulse) PC Collector Dissipation Tj, Tstg Operating And Storage Junction Temperature Range PW=10ms, duty Cycle=50% ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=6V, IC=0 Emitter Cut off Current hFE(1) IC=100mA, VCE=2V DC Current Gain hFE(2)

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Other Datasheets by Continental Device India Limited
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