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CSD1426F - NPN HIGH VOLTAGE SILICON POWER TRANSISTORS

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CSD1426F Product details

Description

SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous IE Emitter Current PC Collector Power Dissipation @ Tc=25ºC Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION ICBO VCB=500V, IE=0 Collector Cut off Current VEBO IE=200mA, IC=0 Emitter Base Breakdown Voltage hFE IC=0.5A, VCE=5V DC Current Gain V IC=3A, IB=0.8A Collector Em

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