Datasheet4U Logo Datasheet4U.com

CSD1489 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR

📥 Download Datasheet

Preview of CSD1489 PDF
datasheet Preview Page 2 datasheet Preview Page 3

CSD1489 Product details

Description

SYMBOL VALUE BVCBO 20 Collector -Base Voltage BVCEO 16 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current PC 0.75 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN BVCBO IC=10uA, IE=0 20 Collector -Base Voltage BVCEO IC=1mA, IB=0 16 Collector Emitter Voltage BVEBO IE=10uA, IC=0 6.0 Emitter Base Voltage ICBO VCB=16

📁 CSD1489 Similar Datasheet

  • CSD10060 - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10060A - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10060B - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10060G - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10120 - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10120D - ZERO RECOVERY RECTIFIER (ETC)
  • CSD1047 - TO-3P Fully Isolated Plastic Package Transistor (CDIL)
  • CSD1047F - TO-3P Fully Isolated Plastic Package Transistor (CDIL)
Other Datasheets by Continental Device India Limited
  • CSD1426F - NPN HIGH VOLTAGE SILICON POWER TRANSISTORS
  • CSD1616 - NPN SILICON EPITAXIAL TRANSISTOR
  • CSD1638 - NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
  • CSD73 - NPN SILICON EPITAXIAL POWER TRANSISTOR
Published: |