MXN2512 Dual N-Channel Power MOSFET

ChipSourceTek

Description

Dual N-Channel Enhancement Mode Power MOSFET .
The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

📥 Download Datasheet

MXN2512 Datasheet Preview — Preview of MXN2512 PDF

Datasheet Specifications

Part number: MXN2512
Manufacturer: ChipSourceTek
File Size: 812.12 KB
Datasheet: MXN2512-ChipSourceTek.pdf
Description: Dual N-Channel Power MOSFET

Features

* Schematic diagram
* VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ. )=7.2mΩ @VGS=4.2V RDS(ON)(Typ. )=7.4mΩ @VGS=3.8V RDS(ON)(Typ. )=8mΩ @VGS=2.5V RDS(ON)(Typ. )=10mΩ ESD Rating: 2000V HBM
* Asvanced trench MOSFET process technology k
* Ultra low on-resistance with low gate charge
* New The

MXN2512 Distributors

📁 Related Datasheet

MXN13 MXN13FB06A MXN13FB10E MXN13FB12F MXN13FB12K

📌 All Tags

MXN2512 Dual N-Channel Power MOSFET ChipSourceTek

ChipSourceTek MXN2512-like datasheet