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MXN2512 Dual N-Channel Power MOSFET

MXN2512 Description

Dual N-Channel Enhancement Mode Power MOSFET .
The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

MXN2512 Features

* Schematic diagram
* VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ. )=7.2mΩ @VGS=4.2V RDS(ON)(Typ. )=7.4mΩ @VGS=3.8V RDS(ON)(Typ. )=8mΩ @VGS=2.5V RDS(ON)(Typ. )=10mΩ ESD Rating: 2000V HBM
* Asvanced trench MOSFET process technology k
* Ultra low on-resistance with low gate charge
* New The

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Datasheet Details

Part number
MXN2512
Manufacturer
ChipSourceTek
File Size
812.12 KB
Datasheet
MXN2512-ChipSourceTek.pdf
Description
Dual N-Channel Power MOSFET

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