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MXN2386 Dual N-Channel Enhancement Mode Power MOSFET

MXN2386 Description

Dual N-Channel Enhancement Mode Power MOSFET .
The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

MXN2386 Features

* Schematic diagram
* VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ. )=6mΩ @VGS=4.2V RDS(ON)(Typ. )=6.4mΩ @VGS=3.8V RDS(ON)(Typ. )=6.6mΩ @VGS=2.5V RDS(ON)(Typ. )=8.3mΩ ESD Rating:2000V HBM
* High power and current handing capability k
* Lead free product is acquired
* Surface mount package

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Datasheet Details

Part number
MXN2386
Manufacturer
ChipSourceTek
File Size
744.18 KB
Datasheet
MXN2386-ChipSourceTek.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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