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MXN2508 Dual N-Channel Power MOSFET

MXN2508 Description

Dual N-Channel Enhancement Mode Power MOSFET .
The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

MXN2508 Features

* Schematic diagram
* VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ. )=14mΩ @VGS=4.2V RDS(ON)(Typ. )=14.4mΩ @VGS=3.8V RDS(ON)(Typ. )=15.6mΩ @VGS=2.5V RDS(ON)(Typ. )=19mΩ ESD Rating: 2000V HBM
* Asvanced trench MOSFET process technology k
* Ultra low on-resistance with low gate charge
* New T

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Datasheet Details

Part number
MXN2508
Manufacturer
ChipSourceTek
File Size
814.57 KB
Datasheet
MXN2508-ChipSourceTek.pdf
Description
Dual N-Channel Power MOSFET

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