NE24283B ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

California Eastern

Description

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) .
The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility ele.

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Datasheet Specifications

Part number: NE24283B
Manufacturer: California Eastern
File Size: 49.60 KB
Datasheet: NE24283B-CaliforniaEastern.pdf
Description: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

Features

* VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz
* HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz
* GATE LENGTH: 0.25 µm
* GATE WIDTH: 200 µm
* HERMETIC METAL/CERAMIC PACKAGE Optimum Noise Figure, NFOPT (dB) 1.4 1.2 GA 1 0.8 0.6 0.4 0.2 NF 18 15 NOISE FIGURE & ASSO

Applications

* NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 0 1 10 20 30 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 G

NE24283B Distributors

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NE24283B ULTRA LOW NOISE PSEUDOMORPHIC FET California Eastern

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