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NE23300 - SUPER LOW NOISE HJ FET

NE23300 Description

SUPER LOW NOISE HJ FET (SPACE QUALIFIED) .
The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron g.

NE23300 Features

* VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 4.5 4.0 3.5 3.0 NF 2.5 2.0 1.5 1.0 0.5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18
* HIGH ASSOCIATED GAIN: 10.5 dB Typical at 1

NE23300 Applications

* NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 4 GHz f = 12 GHz Associat

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Datasheet Details

Part number
NE23300
Manufacturer
California Eastern
File Size
58.20 KB
Datasheet
NE23300-CaliforniaEastern.pdf
Description
SUPER LOW NOISE HJ FET

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SUPER LOW NOISE FET California Eastern
California Eastern NE23300-like datasheet