NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NEC

Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility.

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Datasheet Specifications

Part number: NE24200
Manufacturer: NEC
File Size: 85.88 KB
Datasheet: NE24200_NEC.pdf
Description: C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Features

* Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP. , Ga = 11.0 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.25 µm
* Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QUALITY GRADE APPL

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NE24200 BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP NEC

NEC NE24200-like datasheet