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E4D20120G - Silicon Carbide Schottky Diode

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CREE

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E4D20120G Silicon Carbide Schottky Diode by CREE - Datasheet Preview — Datasheet preview – E4D20120G

Datasheet Details

Part number	E4D20120G
Manufacturer	CREE
File Size	2.74 MB
Description	Silicon Carbide Schottky Diode
Datasheet	E4D20120G Datasheet
Additional preview pages of the E4D20120G datasheet.

Product details

Features

Package.
4th Generation SiC Merged PIN Schottky Technology.
Zero Reverse Recovery Current.
High-Frequency Operation.
Temperature-Independent Switching Behavior.
AEC-Q101 Qualified and PPAP Capable.
Humidity Resistant Benefits TO-263-2.
Replace Bipolar with Unipolar Rectifiers.
Essentially No Switching Losses.
Higher Efficiency.
Reduction of Heat Sink Requirements.
Parallel Devices Without Ther.

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Published: Jul 30, 2025 |