CMPA801B025 Datasheet (CREE)

CMPA801B025, Power Amplifier

CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.

This MMIC is

CMPA801B025 Features

* 8.5 - 11.0 GHz Operation

* 37 W POUT typical

* 16 dB Power Gain

* 36 % Typical PAE

* 50 Ohm internally matched