CMPA801B025D Datasheet (Wolfspeed)

CMPA801B025D, Power Amplifier

Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher th

CMPA801B025D Features

* 28 dB Small Signal Gain

* 35 W Typical PSAT Operation up to 28 V

* High Breakdown Voltage

* High Temperature Operation

* Size 0.142 x 0.188 x 0.004 inches Applications

* Point to Point Radio

* Communications

* Test In