Datasheet Details
| Part number | HGQ014N04B-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 725.71 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 HGQ014N04B-G-CRMicro.pdf
|
| Part number | HGQ014N04B-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 725.71 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
HGQ014N04B-G-CRMicro.pdf
|
VDSS 40 V HGQ014N04B-G, the silicon N-channel Enhanced ID(Silicon Limited) 200 A VDMOSFETs, is obtained by the high density Trench ID(Package Limited) 100 A technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This device is PD RDS(ON)Typ 96 W 1.1 mΩ suitable for use as a load switch and PWM applications.The package form is PDFN5×6-8L, which accords with the RoHS standard.
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