HGQ018N03A - Silicon N-Channel Power MOSFET

CR Micro

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Datasheet Details

Part number	HGQ018N03A
Manufacturer	CR Micro
File Size	856.32 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HGQ018N03A-CRMicro.pdf

HGQ018N03A Product details

Description

HGQ018N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is PDFN5 6, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤1.8mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.

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Published: Dec 8, 2024 |