Datasheet4U Logo Datasheet4U.com

CS70N06A4 - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤10 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet preview – CS70N06A4

Datasheet Details

Part number CS70N06A4
Manufacturer CR Micro
File Size 487.86 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS70N06A4 Datasheet
Additional preview pages of the CS70N06A4 datasheet.

📁 Similar Datasheet

  • CS70-B2GA101KYNS - Disk Ceramic Capacitors (TDK)
  • CS70-B2GA151KYNS - Disk Ceramic Capacitors (TDK)
  • CS70-B2GA221KYNS - Disk Ceramic Capacitors (TDK)
  • CS7054 - Low Side PWM FET Controller (Cherry Semiconductor Corporation)
  • CS7054 - Low Side PWM FET Controller (ON Semiconductor)
  • CS7100 - CS-7100 (Cherry Semiconductor)
  • CS7102 - CS-7102 (Cherry Semiconductor)
  • CS7104 - CS-7104 (Cherry Semiconductor)
  • CS7105 - CS-7105 (Cherry Semiconductor)
  • CS7106 - LCD Driver A/D Converter (Semico)
Other Datasheets by CR Micro

Full PDF Text Transcription

Click to expand full text
Silicon N-Channel Power MOSFET ○R CS70N06 A4 General Description： CS70N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤10 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 60 V 70 A 113 W 7.
Published: |