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Silicon N-Channel Power MOSFET
○R
CS70N30 ANR
General Description：
CS70N30 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the RoHS standard..
Features：
Fast Switching
Low ON Resistance(Rdson≤42mΩ) Low Gate Charge (Typical Data: 136.2nC) Low Reverse transfer capacitances(Typical: 107pF) 100% Single Pulse avalanche energy Test
300
V
70
A
250
W
36
mΩ
Applications：
Power switch circuit of electron ballast and adaptor.
CS70N30ANR Datasheet
