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CS55N25FA9R - Silicon N-Channel Power MOSFET

CS55N25FA9R Description

Silicon N-Channel Power MOSFET ○R CS55N25F A9R General .
CS55N25F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve s.

CS55N25FA9R Features

* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances

CS55N25FA9R Applications

* Power switch circuit of electron ballast and adaptor. 250 V 55 A 50 W 56 mΩ Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Curr

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Datasheet Details

Part number
CS55N25FA9R
Manufacturer
CR Micro
File Size
795.03 KB
Datasheet
CS55N25FA9R-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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