Datasheet Details
- Part number
- CS55N06A4
- Manufacturer
- CR Micro
- File Size
- 2.01 MB
- Datasheet
- CS55N06A4-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
CS55N06A4 Description
Silicon N-Channel Power Trench MOSFET ○R CS55N06 A4 General .
CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve swit.
CS55N06A4 Applications
* Power switch circuit of adaptor and charger. Absolute(TJ= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 PD TJ,Tstg
Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage
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