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CS55N06AQ3-G - Silicon N-Channel Power MOSFET

CS55N06AQ3-G Description

Silicon N-Channel Power Trench MOSFET ○R CS55N06 AQ3-G General .
CS55N06 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improv.

CS55N06AQ3-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch

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Datasheet Details

Part number
CS55N06AQ3-G
Manufacturer
CR Micro
File Size
1.46 MB
Datasheet
CS55N06AQ3-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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