CS21N06A4 Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS21N06A4, Silicon N-Channel Power MOSFET

VDSS 60 CS21N06 A4, the silicon N-channel Enhanced ID 21 VDMOSFETs, is obtained by the high density Trench PD 31 technology which reduce the conduction loss, improve switching RDS(ON)Typ 33 performance and enhance the avalanche energy.

This device is suitable for use as a load switch and

CS21N06A4 Features

* l Fast Switching l Low ON Resistance(Rdson≤45mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. ○R V A W mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VG