CS21N03AQ2-1 Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS21N03AQ2-1, Silicon N-Channel Power MOSFET

CS21N03 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications..

The package form

CS21N03AQ2-1 Features

* l Fast Switching l Low ON Resistance(Rdson≤21 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. TV screen drive. Absolute（TA= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDM