Type CEP1186 CEB1186 CEF1186
VDSS 800V
RDS(ON) 2.3Ω
ID 6A
@VGS 10V
800V 2.3Ω 6A 10V
800V 2.3Ω
6A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CEP1186/CEB1186 CEF1186
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP1186 CEB1186 CEF1186
VDSS 800V
RDS(ON) 2.3Ω
ID 6A
@VGS 10V
800V 2.3Ω 6A 10V
800V 2.3Ω
6A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS VGS ID IDM e
PD
800
±30
6 24 166
1.3
EAS 9.4
IAS 2.
CEB1186 Datasheet
