Datasheet Specifications
- Part number
- BCF120T
- Manufacturer
- BeRex
- File Size
- 378.87 KB
- Datasheet
- BCF120T-BeRex.pdf
- Description
- HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
Description
BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length .
Features
* 28.0 dBm Typical Output PowerApplications
* requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF120T is produced using state of the art metallization and devices from each wafer are screened to insuBCF120T Distributors
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