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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF020T Description

BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF020T Features

* 20 dBm Typical Output Power
* 13.5 dB Typical Power Gain @ 12 GHz
* Low Phase Noise

BCF020T Applications

* requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF020T is produced using state of the art metallization and each wafer is screened to insure compliance

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Datasheet Details

Part number
BCF020T
Manufacturer
BeRex
File Size
377.39 KB
Datasheet
BCF020T-BeRex.pdf
Description
HIGH EFFICIENCY HETEROJUNCTION POWER FET

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HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex
BeRex BCF020T-like datasheet