Datasheet Specifications
- Part number
- BCF080T
- Manufacturer
- BeRex
- File Size
- 378.33 KB
- Datasheet
- BCF080T-BeRex.pdf
- Description
- HIGH EFFICIENCY HETEROJUNCTION POWER FET
Description
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
Features
* 26.0 dBm Typical Output PowerApplications
* requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF080T is produced using state of the art metallization and devices from each wafer are screened to insuBCF080T Distributors
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