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BF98N60L, BF98N60 - N-Channel MOSFET

BF98N60L Description

BYD Microelectronics Co., Ltd.BF98N60/BF98N60L 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

BF98N60L Features

* z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A) z Low CRSS (typical 11pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche

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This datasheet PDF includes multiple part numbers: BF98N60L, BF98N60. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BF98N60L, BF98N60
Manufacturer
BYD
File Size
255.64 KB
Datasheet
BF98N60-BYD.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: BF98N60L, BF98N60.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET BYD
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