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BLS9G2934LS-400 - LDMOS S-band radar power transistor

Download the BLS9G2934LS-400 datasheet PDF. This datasheet also covers the BLS9G2934L-400 variant, as both devices belong to the same ldmos s-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.9 GHz to 3.4 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit.

Features

  • Single ended.
  • Small size.
  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated dual sided ESD protection enables excellent off-state isolation.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLS9G2934L-400-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLS9G2934LS-400
Manufacturer Ampleon
File Size 613.13 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS9G2934LS-400 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLS9G2934L-400; BLS9G2934LS-400 LDMOS S-band radar power transistor Rev. 1 — 6 April 2017 Product data sheet 1. Product profile 1.1 General description Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.9 GHz to 3.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) pulsed RF 2.9 to 3.4 32 400 12 43 1.
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