BLL9G1214L-600 Datasheet (Ampleon) - LDMOS L-band radar power transistor

BLL9G1214L-600, LDMOS L-band radar power transistor

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit.

Test signal f VDS PL(3dB) Gp D (GHz) (V) (W

BLL9G1214L-600 Features

* High efficiency

* Excellent ruggedness

* Designed for L-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match