BLF8G24LS-200PN Datasheet (Ampleon) - Power LDMOS transistor

BLF8G24LS-200PN, Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%

BLF8G24LS-200PN Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation (2300 MHz to 2400 MHz)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects prov