BLF8G20LS-160V - Power LDMOS transistor

Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

• Excellent ruggedness.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Designed for broadband operation.
• Lower output capacitance for improved performance in Doherty.