BLF8G24LS-150GV Datasheet - Ampleon

BLF8G24LS-150GV Power LDMOS transistor

150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLF8G24LS-150GV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (70 MHz typical)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory

BLF8G24LS-150GV Datasheet (449.76 KB)