BLF6G20-180RN Datasheet (Ampleon) - Power LDMOS transistor

BLF6G20-180RN, Power LDMOS transistor

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Mode of operation f VDS PL(AV) Gp D IMD3 (MHz) (V) (W) (dB) (%) (dBc) 2-carrier WC

BLF6G20-180RN Features

* Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:

* Average output power = 40 W

* Power gain = 17.2 dB

* Efficiency = 27 %

* IMD3 = 41 dBc

* ACPR = 38 dBc

* Easy power control

* Integrated