BLF6G20LS-110, BLF6G20-110 - Power LDMOS transistor

NXP Semiconductors

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BLF6G20LS-110 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G20LS-110, BLF6G20-110. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	BLF6G20LS-110, BLF6G20-110
Manufacturer	NXP Semiconductors
File Size	110.85 KB
Description	Power LDMOS transistor
Datasheet	BLF6G20-110_NXPSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLF6G20LS-110, BLF6G20-110. Please refer to the document for exact specifications by model.

BLF6G20LS-110 Product details

Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 37[1] ACPR (dBc) 40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.

Features

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efﬁciency = 31 % N IMD3 =.
37 dBc N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, re.

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Published: Jul 1, 2009 |