BLC8G09XS-400AVT Datasheet (Ampleon) - Power LDMOS transistor

BLC8G09XS-400AVT, Power LDMOS transistor

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

VDS = 32V; IDq = 880 mA (main); VGS(amp)peak = 0.8

BLC8G09XS-400AVT Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent digital pre-distortio