BLC8G20LS-400AV Datasheet (Ampleon) - Power LDMOS transistor

BLC8G20LS-400AV, Power LDMOS transistor

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0

BLC8G20LS-400AV Features

* Excellent ruggedness

* Excellent electrical stability

* Suitable for conventional and inverted Doherty

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capa