BLC8G24LS-241AV Datasheet (Ampleon) - Power LDMOS transistor

BLC8G24LS-241AV, Power LDMOS transistor

240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0

BLC8G24LS-241AV Features

* Excellent ruggedness

* High-efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation (2300 MHz to 2400 MHz)

* Asymmetric design to achieve optimum efficiency across the band

* Lower output capacitance for im