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AOD406 N-Channel Enhancement Mode Field Effect Transistor

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Description

AOD406 N-Channel Enhancement Mode Field Effect Transistor General .
The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

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Datasheet Specifications

Part number
AOD406
Manufacturer
Alpha & Omega Semiconductors
File Size
304.88 KB
Datasheet
AOD406_AlphaOmegaSemiconductors.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.0mΩ (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-252 Top View D D-PAK Bottom View D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-So

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, L

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