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AOD409G P-Channel MOSFET

AOD409G Description

isc P-Channel MOSFET Transistor AOD409G *.

AOD409G Features

* Drain Current
* ID= -28A@ TC=25℃
* Drain Source Voltage- : VDSS= -60V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

AOD409G Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -28 A IDM Drain Current-Single Pulsed -80 A PD Total Dissipation @TC=25℃ 60 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
AOD409G
Manufacturer
INCHANGE
File Size
245.46 KB
Datasheet
AOD409G-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
INCHANGE AOD409G-like datasheet