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isc P-Channel MOSFET Transistor
AOD409G
·FEATURES ·Drain Current –ID= -28A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 40mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
-28
A
IDM
Drain Current-Single Pulsed
-80
A
PD
Total Dissipation @TC=25℃
60
W
Tj
Max.
AOD409G Datasheet
