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AO4918 - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

Key Features

  • Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V RDS(ON) < 14.5mΩ.

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AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel www.DataSheet4U.com with the synchronous MOSFET to boost efficiency further Standard Product AO4918 is Pb-free (meets ROHS & Sony 259 specifications). AO4918L is a Green Product ordering option. AO4918 and AO4918L are electrically identical. Features Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V RDS(ON) < 14.5mΩ <18mΩ (VGS = 10V) <27mΩ (VGS = 4.5V) RDS(ON) < 16mΩ SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.