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AO4918 - Dual N-Channel Enhancement Mode Field Effect Transistor

AO4918 Description

AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

AO4918 Features

* Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V RDS(ON) < 14.5mΩ

AO4918 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Lt

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Datasheet Details

Part number
AO4918
Manufacturer
Alpha & Omega Semiconductors
File Size
174.67 KB
Datasheet
AO4918_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

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📌 All Tags

Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO4918-like datasheet

AO4918 Stock/Price