AO4914
Description
Product Summary
The AO4914 uses advanced trench technology to provide Q1(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the
VDS= 30V ID= 8A (VGS=10V) RDS(ON) <20.5mΩ synchronous MOSFET to boost efficiency further.
RDS(ON) <28mΩ
Q2(N-Channel) 30V
8A (VGS=10V) RDS(ON) <20.5mΩ (VGS=10V) RDS(ON) <28mΩ (VGS=4.5V)
ESD Protected 100% UIS Tested
100% Rg Tested
ESD Protected 100% UIS Tested
100% Rg Tested
SCHOTTKY VDS = 30V, IF = 3A, VF<0.5V@1A
SOIC-8
Top View
Bottom View
S1/A G1 S2 G2
Top View
D1/K D1/K D2
D2
G1
D1 K
A S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current...
