AO4912
Description
The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product .. ordering option. AO4912 and AO4912L are electrically identical.
Features
Q1
VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ
Q2
VDS(V) = 30V ID=7A (VGS = 10V) <26mΩ (VGS = 10V) <31mΩ (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K
D2
Q1
G1 S1 A
Q2
G2 S2
SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C A Current TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and...
