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AO4916L, AO4916 Dual N-Channel Enhancement Mode Field Effect Transistor

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Description

Rev 3: Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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This datasheet PDF includes multiple part numbers: AO4916L, AO4916. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AO4916L, AO4916
Manufacturer
Alpha & Omega Semiconductors
File Size
647.24 KB
Datasheet
AO4916_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: AO4916L, AO4916.
Please refer to the document for exact specifications by model.

Features

* VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2 G1 S1 A G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-So

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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