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AO4916A Dual N-Channel Enhancement Mode Field Effect Transistor

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Description

AO4916A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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Datasheet Specifications

Part number
AO4916A
Manufacturer
Alpha & Omega Semiconductors
File Size
212.57 KB
Datasheet
AO4916A_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 17mΩ

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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