Description
The AS7C33512FT18A is a high-performance CMOS 8-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words × 18 bits.
Features
- Organization: 524,288 words × 18 bits Fast clock to data access: 7.5/8.5/10ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available in 100-pin TQFP package Individual byte write and global write.
- Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ L.
AS7C33512FT18A_AllianceSemiconductorCorporation.pdf