AT-42010, AT-42010_Agilent(Hewlett - Up to 6 GHz Medium Power Silicon Bipolar Transistor

Agilent(Hewlett-Packard)

AT-42010 Description

Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 .
Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

AT-42010 Features

* High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz
* High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz
* Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz
* High Gain-Bandwidth Pr

AT-42010 Applications

* This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50␣ Ω up to 1 GHz , makes this device easy to use as a low noise amplifier. The AT-42010 bipolar transistor is fabricated using

📥 Download Datasheet

AT-42010 Datasheet Preview — This datasheet PDF includes multiple part numbers: AT-42010, AT-42010_Agilent(Hewlett. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: AT-42010, AT-42010_Agilent(Hewlett
Manufacturer: Agilent(Hewlett-Packard)
File Size: 52.90 KB
Datasheet: AT-42010_Agilent(Hewlett-Packard).pdf
Description: Up to 6 GHz Medium Power Silicon Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: AT-42010, AT-42010_Agilent(Hewlett.
Please refer to the document for exact specifications by model.

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📌 All Tags

GHz Medium Power Silicon Bipolar Transistor Agilent(Hewlett-Packard)

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