APT1001RBN Datasheet (Advanced Power Technology)

APT1001RBN, MOSFET

D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.

APT 1001RBN UNIT Volts Amps 1000 11 44 ± 30 310 2.48 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating an