AP9T18GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp.▼ G-S Diode embedded ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistan.

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Datasheet Specifications

Part number: AP9T18GEH
Manufacturer: Advanced Power Electronics
File Size: 133.02 KB
Datasheet: AP9T18GEH-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9T18GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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