AP9T18GEJ Datasheet PDF (N-CHANNEL ENHANCEMENT MODE POWER MOSFET) | Download Advanced Power Electronics AP9T18GEJ

AP9T18GEJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9T18GEJ, a member of the AP9T18GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Datasheet Details

Part number	AP9T18GEJ
Manufacturer	Advanced Power Electronics Corp
File Size	133.02 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP9T18GEJ Datasheet
Additional preview pages of the AP9T18GEJ datasheet.

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Full PDF Text Transcription

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AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ G-S Diode embedded ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 40A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.

Published: Sep 27, 2014 |